Resistive RAM: The Future Embedded Non-Volatile Memory?


The major drawback to existing embedded reprogrammable non-volatile memory (NVM) solutions, such as EEPROM and Flash, is they add costly processing steps to the standard logic CMOS flow and becomes increasingly incompatible with advanced logic processes. In recent years, there have been several emerging non-volatile memory technologies under extensive research and development. They include phase-change random access memory (PCRAM), spin-transfer torque magnetic RAM (STT-MRAM), ferroelectric RAM (FRAM), and resistive RAM (RRAM or ReRAM). Among them for embedded applications, RRAM promises some significant advantages in CMOS compatibility, cell-structure simplicity, excellent scalability, low power consumption and fast operation speed.

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