Argument for anti-fuse non-volatile memory in 28nm high-K metal gate

October 17, 2011

By Andre Hassan, Kilopass Technology Inc.

With 28nm high-K metal Gate (HKMG) semiconductor production ramping in 2012, system-on-chip (SoC) designers are presented with the silicon real estate and economic incentive to integrate more functionality on-chip. One function that continues to be challenging for on-chip integration is non-volatile memory (NVM) despite its many advantages. At smaller process geometries, especially 28nm HKMG, the challenges to integrating NVM such as flash, pseudo flash, and e-fuse are effectively addressed with an anti-fuse solution.

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